skiip 23ac12t4v1 ? by semikron rev. 4 ? 02.12.2011 1 miniskiip ? 2 ac skiip 23ac12t4v1 features ?trench 4 igbts ? robust and soft freewheeling diodes in cal technology ? highly reliable spring contacts for electrical connections ? ul recognised file no. e63532 remarks ?v cesat , v f = chip level value ? case temp. limited to t c = 125c max. (for baseplateless modules t c = t s ) ? product rel. results valid for tj 150 (recomm. top = -40 ... +150c) absolute maximum ratings symbol conditions values unit inverter - igbt v ces t j =25c 1200 v i c t j = 175 c t s =25c 41 a t s =70c 34 a i cnom 25 a i crm i crm = 3 x i cnom 75 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j =150c 10 s t j -40 ... 175 c inverse - diode i f t j = 175 c t s =25c 32 a t s =70c 26 a i fnom 25 a i frm i frm = 3xi fnom 75 a i fsm 10 ms, sin 180, t j =150c 100 a t j -40 ... 175 c module i t(rms) t terminal = 80 c, 20a per spring 100 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 2500 v characteristics symbol conditions min. typ. max. unit inverter - igbt v ce(sat) i c =25a v ge =15v chiplevel t j =25c 1.85 2.10 v t j =150c 2.25 2.45 v v ce0 t j =25c 0.8 0.9 v t j =150c 0.7 0.8 v r ce v ge =15v t j =25c 42 48 m ? t j =150c 62 66 m ? v ge(th) v ge =v ce , i c =1ma 55.86.5v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma ma c ies v ce =25v v ge =0v f=1mhz 1.43 nf c oes f=1mhz 0.12 nf c res f=1mhz 0.09 nf q g - 8 v...+ 15 v 142 nc r gint t j =25c 0.00 ? t d(on) v cc = 600 v i c =25a r g on =39 ? r g off =39 ? di/dt on =465a/s di/dt off =350a/s v ge = +15/-15 v t j =150c 44 ns t r t j =150c 46 ns e on t j =150c 3.7 mj t d(off) t j =150c 330 ns t f t j =150c 62 ns e off t j =150c 2.4 mj r th(j-s) per igbt 1 k/w
skiip 23ac12t4v1 2 rev. 4 ? 02.12.2011 ? by semikron miniskiip ? 2 ac skiip 23ac12t4v1 features ?trench 4 igbts ? robust and soft freewheeling diodes in cal technology ? highly reliable spring contacts for electrical connections ? ul recognised file no. e63532 remarks ?v cesat , v f = chip level value ? case temp. limited to t c = 125c max. (for baseplateless modules t c = t s ) ? product rel. results valid for tj 150 (recomm. top = -40 ... +150c) characteristics symbol conditions min. typ. max. unit inverse - diode v f = v ec i f =25a v ge =0v chiplevel t j =25c 2.4 2.7 v t j =150c 2.5 2.8 v v f0 t j =25c 1.3 1.5 v t j =150c 0.9 1.1 v r f t j =25c 44 50 m ? t j =150c 62 68 m ? i rrm i f =25a di/dt off =640a/s v ge =-15v v cc = 600 v t j =150c 19 a q rr t j =150c 4c e rr t j =150c 1.64 mj r th(j-s) per diode 1.52 k/w module m s to heat sink 2 2.5 nm w65g temperatur sensor r 100 t c =100c (r 25 =1000 ? ) 1670 3% ? r(t) r(t)=1000 ? [1+a(t-25c)+b(t-25c) 2 ], a = 7.635*10 -3 c -1 , b = 1.731*10 -5 c -2
skiip 23ac12t4v1 ? by semikron rev. 4 ? 02.12.2011 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t s ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skiip 23ac12t4v1 4 rev. 4 ? 02.12.2011 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance of igbt and diode fig. 10: cal diode forward characteristic fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
skiip 23ac12t4v1 ? by semikron rev. 4 ? 02.12.2011 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. pinout, dimensions pinout
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